Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Pulsed Drain Current: | 700 A | Maximum Power Dissipation: | 300 W |
|---|---|---|---|
| Linear Derating Factor: | 2.0 W/°C | Gate-to-Source Voltage: | ± 20 V |
| Operating Junction And Storage Temperature: | -55 To + 175°C | Soldering Temperature, For 10 Seconds: | 300°C (1.6mm From Case ) |
| Highlight: | power mosfet ic,multi emitter transistor |
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IRF2907ZS-7PPbF
HEXFET® Power MOSFET
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
Absolute Maximum Ratings
| Parameter | Max | Units | |
|---|---|---|---|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 120 | A |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 160 | A |
| IDM | Pulsed Drain Current | 700 | A |
| PD @TC = 25°C | Maximum Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 160 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 410 | mJ |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) | °C |
Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| M25P80-VMN6TP | 50000 | MICRON | NEW | SOP8 |
| MT29C8G96MAZBBDKD-48 IT | 12000 | MICRON | NEW | BGA |
| MT46H64M16LFBF-5 IT:B | 10000 | MICRON | NEW | BGA |
| MT46V64M8CY-5B:J | 10000 | MICRON | NEW | BGA |
| MT29F1G08ABADAH4-IT:D | 20000 | MICRON | NEW | BGA |
| MT41K256M8DA-125:K | 4000 | MICRON | NEW | BGA |
| MT46V32M16CY-5B:J | 12000 | MICRON | NEW | BGA |
| MT41K64M16TW-107 IT:J | 10000 | MICRON | NEW | FBGA |
| MT29F32G08CBACAWP-ITZ:C | 10000 | MICRON | NEW | TSOP |
| M25PE16-VMW6TG | 50000 | MICRON | NEW | SOP8 |
| MT48LC8M16A2P-6A IT:L | 20000 | MICRON | NEW | TSOP |
| MT29F128G08CFABBWP-12IT:B | 4000 | MICRON | NEW | BGA |
| M25P10-AVMN6TP | 50000 | MICRON | NEW | SOP8 |
| MT46H64M32LFBQ-48 IT:C | 6000 | MICRON | NEW | BGA |
| MT47H64M16NF-25E AIT:M | 10000 | MICRON | NEW | BGA |
| MT29F512G08CKECBH7-12:C | 1000 | MICRON | NEW | BGA |
| MT46H64M32LFCX-5 IT:B | 8000 | MICRON | NEW | FBGA |
| MT29F1G08ABAEAH4:E | 20000 | MICRON | NEW | BGA |
| M29W160EB70N6E | 30000 | MICRON | NEW | TSOP-48 |
| PC28F512P30EFB | 4000 | MICRON | NEW | BGA |
| N25Q00AA13GSF40G | 4000 | MICRON | NEW | SOP |
| MT29F1G16ABBDAHC-IT:D | 14000 | MICRON | NEW | BGA |
| MT29TZZZ8D5JKEZB-107 W:95Q | 10000 | MICRON | NEW | BGA |
| MT47H64M16NF-25E:M | 30000 | MICRON | NEW | BGA |
| MT40A512M16JY-083E:B | 10000 | MICRON | NEW | BGA |
| MT47H64M16NF-25E IT:M | 30000 | MICRON | NEW | FBGA |
| MT29E2T08CUHBBM4-3R:B | 2000 | MICRON | NEW | BGA |
| MT46V16M16P-5B:M | 30000 | MICRON | NEW | TSOP |
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