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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

: Large Image : IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRF7601PBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9000pcs

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Detailed Product Description

Pulsed Drain Current :	30 A	Power Dissipation:	1.8 W
Linear Derating Factor:	14 MW/°C	Gate-to-Source Voltage:	±12 V
Peak Diode Recovery Dv/dt :	5.0 V/ns	Junction And Storage Temperature:	-55 To + 150 °C
Highlight:	multi emitter transistor , silicon power transistors

IRF7601 HEXFET® Power MOSFET

• Generation V Technology

• Ultra Low On-Resistance

• N-Channel MOSFET

• Very Small SOIC Package

• Low Profile (<1.1mm)

• Available in Tape & Reel

• Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_A = 25°C	Continuous Drain Current, V_GS @ 4.5V	5.7	A
I_D @ T_A = 70°C	Continuous Drain Current, V_GS @ 4.5V	4.6	A
I_DM	Pulsed Drain Current	30	A
P_D @T_A = 25°C	Power Dissipation	1.8	W
	Linear Derating Factor	14	mW/°C
V_GS	Gate-to-Source Voltage	± 12	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150	°C

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