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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

: Large Image : Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFP240PBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9500pcs

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Detailed Product Description

Drain-Source Voltage:	200 V	Gate-Source Voltage:	± 20 V
Pulsed Drain Current:	80 A	Linear Derating Factor:	1.2 W/°C
Single Pulse Avalanche Energy:	510 MJ	Maximum Power Dissipation:	150 W
Highlight:	multi emitter transistor , silicon power transistors

IRFP240, SiHFP240

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			V_DS	200	V
Gate-Source Voltage			V_GS	± 20	V
Continuous Drain Current	V_GS at 10 V	T_C = 25 °C	I_D	20	A
Continuous Drain Current	V_GS at 10 V	T_C = 100 °C	I_D	12	A
Pulsed Drain Current^a			I_DM	80	A
Linear Derating Factor				1.2	W/°C
Single Pulse Avalanche Energy^b			E_AS	510	mJ
Repetitive Avalanche Current^a			I_AR	20	A
Repetitive Avalanche Energy^a			E_AR	15	mJ
Maximum Power Dissipation		T_C = 25 °C	P_D	150	W
Peak Diode Recovery dV/dt^c			dV/dt	5.0	V/ns
Operating Junction and Storage Temperature Range			T_J, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s		300^d	°C
Mounting Torque		6-32 or M3 screw		10	lbf · in
Mounting Torque		6-32 or M3 screw		1.1	N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD = 50 V, starting T_J = 25 °C, L = 1.9 mH, R_G = 25 Ω, I_AS= 20 A (see fig. 12).

c. I_SD ≤ 18 A, dI/dt ≤ 150 A/µs, V_DD ≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

LM211P	13049	TI	11+	TSSOP-8
LM224DR	67000	TI	16+	SOP-14
LM22676MRE-5.0	8568	TI	15+	SOP-8
LM22676MRX-5.0	8639	TI	15+	PSOP8
LM22676MRX-ADJ	1691	TI	16+	SOP-8
LM22676TJE-ADJ	6794	TI	13+	TO-263
LM22777TJ-ADJ	5048	NS	16+	TO-263
LM239APT	4458	ST	13+	TSSOP-14
LM25011MY/NOPB	3243	TI	16+	MSOP-10
LM25037MTX	4474	TI	09+	TSSOP-16
LM25119PSQ/NOPB	1820	TI	15+	WQFN-32
LM25575MHX	3711	TI	12+	TSSOP-16
LM25576MHX	5141	TI	14+	TSSOP-20
LM2575D2T-3.3R4G	18153	ON	11+	TO-263
LM2575HVT-5.0	13120	NS	15+	TO-220
LM2575SX-5.0	22261	NS	16+	TO-263
LM2576-5.0WU	4267	MICREL	14+	TO-263
LM2576D2TR4-5G	5273	ON	14+	TO-263
LM2576HVSX-ADJ	6468	TI	15+	TO-263
LM2576HVT-ADJ	21640	NS	16+	TO-220
LM2576SX-1.2	18871	NSC	13+	TO263-5
LM2577T-ADJ	4542	NS	12+	TO-220-5
LM2586SX-ADJ	2498	NS	07+	TO-263-7
LM2588T-5.0	3655	TI	15+	TO-220-7
LM258DR	69000	TI	16+	SOP-8
LM258DT	70000	ST	13+	SOP-8
LM2594HVM-5.0	3314	NS	13+	SOP-8
LM2596HVT-ADJ	21711	NS	14+	TO-220
LM2622MM-ADJ	2888	NSC	08+	MSOP-8
LM2651MTCX-ADJ	8710	NS	04+	TSSOP