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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

: Large Image : IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFR9120N

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9500pcs

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Detailed Product Description

Pulsed Drain Current:	-26 A	Power Dissipation:	40 W
Linear Derating Factor:	0.32 W/°C	Gate-to-Source Voltage:	± 20 V
Single Pulse Avalanche Energy:	100 MJ	Avalanche Current:	-6.6 A
Highlight:	multi emitter transistor , silicon power transistors

IRFR/U9120N

HEXFET® Power MOSFET

• Ultra Low On-Resistance

• P-Channel

• Surface Mount (IRFR9120N)

• Straight Lead (IRFU9120N)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D@ T_C = 25°C	Continuous Drain Current, V_GS @ -10V	-6.6	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ -10V	-4.2	A
I_DM	Pulsed Drain Current	-26	A
P_D @T_C = 25°C	Power Dissipation	40	W
	Linear Derating Factor	0.32	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	100	mJ
I_AR	Avalanche Current	-6.6	A
E_AR	Repetitive Avalanche Energy	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
T_{J ,}T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C

Stock Offer (Hot Sell)

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