Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage: | 500 V | Drain-gate Voltage: | 500 V |
|---|---|---|---|
| Gate- Source Voltage: | ±25 V | Drain Current (pulsed): | 72 A |
| Peak Diode Recovery Voltage Slope: | 15 V/ns | Max. Operating Junction Temperature: | 150 °C |
| Highlight: | power mosfet ic,multi emitter transistor |
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STP21NM50N-STF21NM50N-STW21NM50N
STB21NM50N - STB21NM50N-1
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET
General Features
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
APPLICATIONS
The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
|---|---|---|---|---|
| TO-220 / D2PAK / I2PAK / TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 500 | V | |
| VGS | Gate- source Voltage | ±25 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 18 | 18 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 11 | 11 (*) | A |
| IDM (•) | Drain Current (pulsed) | 72 | 72 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 140 | 30 | W |
| Derating Factor | 1.12 | 0.23 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| Viso | Insulation Winthstand Voltage (DC) | -- | 2500 | V |
| Tstg | Storage Temperature | –55 to 150 | °C | |
| Tj | Max. Operating Junction Temperature | 150 | °C | |
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Stock Offer (Hot Sell)
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