TLP155E Electronic integrated circuit Chips Photocouplers GaA As Infrared LED & Photo IC

Photocouplers GaAℓAs Infrared LED & Photo IC TLP155

Applications

• Plasma Display Panels (PDPs)

• Transistor Inverters

• MOSFET Gate Drivers

• IGBT Gate Drivers

General

The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The TLP155 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µ. TLP155 is suitable for direct gate driving circuit for IGBTs or power MOSFETs.

Features

(1) Buffer logic type (Totem pole output)

(2) Package type: SO6

(3) Output peak current: ±0.6 A (max)

(4) Operating temperature: -40 to 100℃

(5) Threshold input current: 7.5 mA (max)

(6) Propagation delay time: tpHL/tpLH = 200 ns (max)

(7) Common-mode transient immunity: ±20 kV/µs (min)

(8) Propagation delay skew: ±85 ns(max)

(9) Isolation voltage: 3750 Vrms (min)

Packaging and Pin Assignment

Internal Circuit (Note)

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25℃​)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width (PW) ≤ 1 µs, 300 pps

Note 2: Exponential waveform. Pulse width ≤ 2 µs, f ≤ 10 kHz, VCC = 20V, Ta = -40 to 100℃

Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.

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