Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Collector-Emitter Breakdown Voltage: | 50 Vdc | Collector-Base Breakdown Voltage: | 60 Vdc |
|---|---|---|---|
| Emitter-Base Breakdown Voltage: | 5 Vdc | Collector Cutoff Current: | 0.1 UAdc |
| Emitter Cutoff Current: | 0.1 UAdc | Package: | TO-92 |
| Highlight: | multi emitter transistor,silicon power transistors |
||
2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
NPN Silicon Epitaxial Transistor
Features
• 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF,
AF Amplifier and General Purpose Applications.
• Capable of 0.4Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 60V
• Marking : C1815
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information)
• Operating and storage junction temperature range:-55o C to +125o C
Electrical Characteristics @ 25℃ Unless Otherwise Specified
| Symbol | Parameter | Min | Max | Units |
|---|---|---|---|---|
| OFF CHARACTERISTICS | ||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage* (IC=0.1mAdc, IB=0) | 50 | Vdc | |
| V(BR)CBO | Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) | 60 | Vdc | |
| V(BR)EBO | Emitter-Base Breakdown Voltage (IE=100uAdc,IC=0) | 5 | Vdc | |
| ICBO | Collector Cutoff Current (VCB=60Vdc, IE=0Adc) | 0.1 | uAdc | |
| ICEO | Collector Cutoff Current (VCB=50Vdc, IE=0Adc) | 0.1 | uAdc | |
| IEBO | Emitter Cutoff Current (VEB=5.0Vdc, IC=0Adc) | 0.1 | uAdc | |
| ON CHARACTERISTICS | ||||
| hFE(1) | DC Current Gain* (IC=2.0mAdc, VCE=6.0Vdc) | 70 | 700 | |
| VCE(sat) | Collector-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) | 0.25 | Vdc | |
| VBE(sat) | Base-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc) | 1.0 | Vdc | |
| VBE | Base-Emitter Voltage (IE=310mAdc) | -- | 1.45 | Vdc |
| SMALL-SIGNAL CHARACTERISTICS | ||||
| fT | Transistor Frequency (IC=1.0mAdc, VCE=10Vdc, f=30MHz) | 80 | MHz | |
Stock Offer (Hot Sell)
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