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AP4506GEH Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4506GEH Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

: Large Image : AP4506GEH Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	AP4506GEH

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Drain-Source Voltage:	30 V / -30 V	Gate-Source Voltage:	±20 V
Pulsed Drain Current:	50 A / -50 A	Total Power Dissipation:	3.1 W
Storage Temperature:	-55 To 150 ℃	Operating Junction Temperature:	-55 To 150 ℃
Highlight:	multi emitter transistor , silicon power transistors

AP4506GEH

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

▼ Simple Drive Requirement

▼ Good Thermal Performance

▼ Fast Switching Performance

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

AP4506GEH Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Absolute Maximum Ratings

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-channel	P-channel	Units
V_DS	Drain-Source Voltage	30	-30	V
V_GS	Gate-Source Voltage	±20	±20	V
I_D@T_A=25℃	Continuous Drain Current³	9	-8	A
I_D@T_A=70℃	Continuous Drain Current³	7.2	-6.4	A
I_DM	Pulsed Drain Current¹	50	-50	A
P_D@T_A=25℃	Total Power Dissipation	3.1		W
T_STG	Storage Temperature Range	-55 to 150		℃
T_J	Operating Junction Temperature Range	-55 to 150		℃

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.

Stock Offer (Hot Sell)

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