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IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet

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IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet

: Large Image : IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRLL110TRPBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	12000pcs

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Detailed Product Description

Drain-Source Voltage:	100 V	Gate-Source Voltage:	± 10 V
Pulsed Drain Current:	12 A	Linear Derating Factor:	0.025 W/°C
Single Pulse Avalanche Energy:	50 MJ	Repetitive Avalanche Current:	1.5 A
Highlight:	power mosfet ic , silicon power transistors

IRLL110, SiHLL110

Power MOSFET

PRODUCT SUMMARY

V_DS (V)	100
R_DS(on) (Ω)	V_GS= 5.0 V	0.54
Q_g (Max.) (nC)	6.1
Q_gs(nC)	2.6
Q_gd (nC)	3.3
Configuration	Single

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• R_DS(on) Specified at V_GS = 4 V and 5 V

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.

ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			V_DS	100	V
Gate-Source Voltage			V_GS	± 10	V
Continuous Drain Current	V_GS at 5.0 V	T_C = 25 °C	I_D	1.5	A
Continuous Drain Current	V_GS at 5.0 V	T_C = 100 °C	I_D	0.93	A
Pulsed Drain Current^a			I_DM	12	A
Linear Derating Factor				0.025	W/°C
Linear Derating Factor (PCB Mount)^e				0.017	W/°C
Single Pulse Avalanche Energy^b			E_AS	50	mJ
Repetitive Avalanche Current^a			I_AR	1.5	A
Repetitive Avalanche Energy^a			E_AR	0.31	mJ
Maximum Power Dissipation		T_C = 25 °C	P_D	3.1	W
Maximum Power Dissipation (PCB Mount)^e		T_A= 25 °C	P_D	2.0	W
Peak Diode Recovery dV/dt^c			dV/dt	5.5	V/ns
Operating Junction and Storage Temperature Range			T_J, T_stg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s		300^d	°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5 A (see fig. 12).

c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

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