W29EE512P-70 Integrated Circuit Chip 64K X 8 CMOS FLASH MEMORY

W29EE512

64K × 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 5-volt program and erase operations

· Fast page-write operations

  - 128 bytes per page

  - Page program cycle: 10 mS (max.)

  - Effective byte-program cycle time: 39 mS  

  - Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Read access time: 70/90/120 nS

· Typical page program/erase cycles: 1K/10K

· Ten-year data retention

· Software and hardware data protection

· Low power consumption

  - Active current: 50 mA (max.)

  - Standby current: 100 mA (max.)

· Automatic program timing with internal VPP generation

· End of program detection

  - Toggle bit

  - Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard byte-wide pinouts

· Available packages: 32-pin PLCC, TSOP and VSOP

Absolute Maximum Ratings

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.

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