74HC04D Integrated Circuit Chip Hex inverter high speed Si-gate CMOS devices

74HC04; 74HCT04

Hex inverter

FEATURES

• Complies with JEDEC standard no. 8-1A

• ESD protection:

  HBM EIA/JESD22-A114-A exceeds 2000 V

  MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 to +85 °C and −40 to +125 °C.

DESCRIPTION

The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.

QUICK REFERENCE DATA

GND = 0 V; T_amb = 25 °C; t_r = t_f ≤ 6.0 ns

Notes

1. C_PD is used to determine the dynamic power dissipation (P_D in µW).

    P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:

    f_i = input frequency in MHz;

    f_o = output frequency in MHz;

    C_L = output load capacitance in pF;

    V_CC = supply voltage in Volts;

    N = total load switching outputs;

    Σ(C_L × V_CC2 × f_o) = sum of the outputs.

2. For 74HC04: the condition is V_I = GND to V_CC.

    For 74HCT04: the condition is V_I = GND to V_CC − 1.5 V.

PINNING

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