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TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

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TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

: Large Image : TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	TYN1012RG

Payment & Shipping Terms:

Minimum Order Quantity:	20 pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000 pcs

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Detailed Product Description

RMS On-state Current (180° Conduction Angle):	12 A	Average On-state Current (180° Conduction Angle):	8 A
Critical Rate Of Rise Of On-state Current IG = 2 X IGT , Tr ≤ 100 Ns:	50 A/µs	Peak Gate Current:	4 A
Average Gate Power Dissipation:	1 W	Operating Junction Temperature:	- 40 To + 125 °C
Highlight:	power mosfet ic , silicon power transistors

TN12, TS12 and TYNx12 Series

SENSITIVE & STANDARD 12A SCRS

Main Features

Symbol	Value	Unit
I_T(RMS)	12	A
V_DRM/V_RRM	600 to 1000	V
I_GT	0.2 to 15	mA

DESCRIPTION

Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits...

Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

Absolute Ratings (limiting values)

Symbol	Parameter			Value		Unit
				TN12-G TYN12	TN12-B/H TS12-B/H
I_T(RMS)	RMS on-state current (180° conduction angle)		Tc = 105°C	12		A
I_T(AV)	Average on-state current (180° conduction angle)		Tc = 105°C	8		A
I_TSM	Non repetitive surge peak onstate current	t_p = 8.3 ms	Tj = 25°C	145	115	A
		t_p = 10 ms		140	110
I ² t	I² t Value for fusing	t_p = 10 ms	Tj = 25°C	98	60	A²S
dI/dt	Critical rate of rise of on-state current I_G = 2 x I_GT , t_r ≤ 100 ns	F = 60 Hz	Tj = 125°C	50		A/µs
I_GM	Peak gate current	t_p = 20 µs	Tj = 125°C	4		A
P_G(AV)	Average gate power dissipation		Tj = 125°C	1		W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125		°C
V_RGM	Maximum peak reverse gate voltage (for TN12 & TYN12 only)			5		V

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