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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

: Large Image : IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFB4229PBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9000pcs

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Detailed Product Description

Gate-to-Source Voltage:	±30 V	Pulsed Drain Current:	180 A
Repetitive Peak Current:	91 A	Linear Derating Factor:	2.2 W/°C
Operating Junction And Storage Temperature:	-40 To + 175°C	Soldering Temperature For 10 Seconds:	300°C
Highlight:	power mosfet ic , silicon power transistors

PDP SWITCH IRFB4229PbF

Features

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

• Low E_PULSE Rating to Reduce Power Dissipation in PDP Sustain,

Energy Recovery and Pass Switch Applications

• Low Q_G for Fast Response

• High Repetitive Peak Current Capability for Reliable Operation

• Short Fall & Rise Times for Fast Switching

• 175°C Operating Junction Temperature for Improved Ruggedness

• Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

V_DS min	250	V
V_{DS (Avalanche)} typ.	300	V
R_DS(ON)typ. @ 10V	38	mΩ
I_RP max @ T_C= 100°C	91	A
T_J max	175	°C

IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Description 

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

	Parameter	Max.	Units
V_GS	Gate-to-Source Voltage	±30	V
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	46	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	33	A
I_DM	Pulsed Drain Current	180	A
I_RP @ T_C = 100°C	Repetitive Peak Current	91	A
P_D @T_C = 25°C	Power Dissipation	330	W
P_D @T_C = 100°C	Power Dissipation	190	W
	Linear Derating Factor	2.2	W/°C
T_JT_STG	Operating Junction and Storage Temperature Range	-40 to + 175	°C
	Soldering Temperature for 10 seconds	300	°C
	Mounting Torque, 6-32 or M3 Screw	10lbin (1.1Nm)	N

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