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IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

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IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

: Large Image : IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFP9240PBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9000pcs

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Detailed Product Description

Drain-Source Voltage:	- 200 V	Gate-Source Voltage:	± 20 V
Pulsed Drain Current:	- 48 A	Linear Derating Factor:	1.2 W/°C
Single Pulse Avalanche Energy:	790 MJ	Maximum Power Dissipation:	150 W
Highlight:	multi emitter transistor , silicon power transistors

IRFP9240, SiHFP9240

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

PRODUCT SUMMARY

V_DS(V)	- 200 V
R_DS(on)(Max.) (Ω)	V_GS = - 10 V	0.50
Q_g (Max.) (nC)	44
Q_gs (nC)	7.1
Q_gd(nC)	27
Configuration	Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			V_DS	- 200	V
Gate-Source Voltage			V_GS	± 20	V
Continuous Drain Current	V_GS at - 10 V	T_C = 25 °C	I_D	- 12	A
Continuous Drain Current	V_GS at - 10 V	T_C= 100 °C	I_D	- 7.5	A
Pulsed Drain Current ^a			I_DM	-48	A
Linear Derating Factor				1.2	W/°C
Single Pulse Avalanche Energy ^b			E_AS	790	mJ
Repetitive Avalanche Current ^a			I^AR	- 12	A
Repetitive Avalanche Energy ^a			E^AR	15	mJ
Maximum Power Dissipation		T_C = 25 °C	P_D	150	W
Peak Diode Recovery dV/dt^c			dV/dt	- 5.0	V/ns
Operating Junction and Storage Temperature Range			T_J, T_stg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s		300 ^d	°C
Mounting Torque		6-32 or M3 screw		10	lbf·in
Mounting Torque		6-32 or M3 screw		1.1	N·m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD = - 50 V, starting T_J = 25 °C, L = 8.2 mH, R_G = 25 Ω, I_AS = - 12 A (see fig. 12).

c. I_SD ≤ - 12 A, dI/dt ≤ 150 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.

d. 1.6 mm from case.

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