Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| RDS(on)1: | 70mΩ | RDS(on)2: | 95mΩ |
|---|---|---|---|
| VGS(off): | 2.0V | IGSS: | ±10µA |
| Highlight: | power mosfet ic,multi emitter transistor |
||
4 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE NPN Epitaxial Silicon Transistor
PACKAGE DIMENSIONS
(in millimeter)
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
| Drain to Source Voltage | VDSS | 60 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±10 | A |
| Drain Current (pulse)* | ID(pulse) | ±40 | A |
| Total Power Dissipation (Tc = 25 ˚C) | PT1 | 20 | W |
| Total Power Dissipation (TA = 25 ˚C) | PT2 | 1.0 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | –55 to +150 | °C |
| Single Avalanche Current** | IAS | 10 | A |
| Single Avalanche Energy** | EAS | 10 | mJ |
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
TYPICAL CHARACTERISTICS (TA = 25 °C)
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