Anterwell Technology Ltd.
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Voltage - Peak Reverse (maximum): | 50V | Different Vr, F Time Capacitance: | 1.15pF @ 30V,1MHz |
---|---|---|---|
Different If And F Resistance: | 500mA @ 10mA,100MHz | Power Dissipation (maximum): | 250mW |
Highlight: | diode rectifier circuit,bridge rectifier circuit |
SMP1322-017LF-TR3 Low Resistance Plastic Packaged PIN Diodes
Features
Designed for High Performance Wireless Switch Applications
Specified 1.5 Ω @ 1 mA
Multiple Package Configurations
Description
The SMP1322 series of plastic packaged, surface mountable PIN diodes are designed for high volume switch applications from 10 MHz to beyond 2 GHz.The ultra low resistance of these diodes (1.5 Ω maximum at 1 mA and 0.5 Ω typical at 10 mA) make the SMP1322 series particularly suited to low loss PIN diode switches in battery operated circuits. Available in a selection of plastic packages and in a variety of configurations including an ultra low inductance (0.2 nH) SOT-143 (SMP1322-017), the small footprint SC-79 and the miniature SC-70. In addition, the SMP1322-016 consists of 2 diodes in a SOT-143 package configured to enable insertion in a quarter-wave T/R switch with no crossover connections.
Absolute Maximum Ratings
Characteristic | Value |
---|---|
Reverse Voltage (VR) | 50V |
Power Dissipation @ 25°C Lead Temperature (PD) |
250 mW |
Storage Temperature (TST) | -65°C to +150°C |
Operating Temperature (TOP) | -65°C to +150°C |
ESD Human Body Model | Class 1B |
Electrical Specifications at 25°C
Parameter | Condition | Typ. | Max. | Unit |
---|---|---|---|---|
Reverse Current (IR) | VR = 50 V | 10 | µA | |
Capacitance (CT) | F = 1 MHz, V = 30 V | 1.0 | pF | |
Resistance (RS) | F = 100 MHz, I = 1 mA | 1.5 | Ω | |
Resistance (RS) | F = 100 MHz, I = 10 mA | 0.5 | Ω | |
Forward Voltage (VF) | IF = 10 mA | 0.85 | V | |
Carrier Lifetime (TI) | IF = 10 mA | 0.4 | µS | |
I Region Width | 8 | µm |
SMP1322-007
In the -007 configuration of the SOT-23 package, the package inductance is effectively reduced to 0.4 nH, in comparison to the 1.5 nH value of the standard configuration. This lower inductance will be particularly beneficial when the diodes are used as shunt connected switches at frequencies higher than 500 MHz, where inductance is the primary limitation on maximum switch isolation. To achieve the effective 0.4 nH, the SOT-23 package must be inserted in the microstrip circuit board with a gap in the trace, as shown in the figure. Because of the polarity of the diode junction, this low inductance feature is only realizable with the cathod
SMP1322-017 SOT-143
Low Inductance PIN Diode The SMP1322-017 utilizes the SMP1322 PIN diode chip in a customized SOT-143 plastic package designed for high isolation performance in a shunt connected switch. Its effective inductance, based on the 3 GHz isolation, is less than 0.2 nH.This diode is designed to work effectively as a shunt element in SPDT switches, covering the wireless frequencies from 900 MHz to beyond 2 GHz. Excellent performance is achievable when used in a quarter-wave T/R switch with the SMP1322-001 (SOT-23) or SMP1322-011 (SOD-323) PIN diode as the series connected diode.
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