Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Collector-to-Base Voltage: | 1500V | Collector-to-Emitter Voltage: | 800V |
|---|---|---|---|
| Emitter-to-Base Voltage: | 5V | Collector Current: | 5A |
| Collector Current (Pulse): | 12A | Storage Temperature: | --55 To +150 |
| Highlight: | electronics ic chip,integrated circuit components |
||
TT2170 Color TV Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25°C
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | 1500 | V | |
| Collector-to-Emitter Voltage | VCEO | 800 | V | |
| Collector-to-Emitter Voltage | VEBO | 5 | V | |
| Collector Current | IC | 5 | A | |
| Collector Current (Pulse) | ICP | 12 | A | |
| Collector Dissipation | PC | 2.0 | W | |
| Tc=25°C | 25 | W | ||
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | --55 to +150 | °C |
Electrical Characteristics at Ta=25°C
| Parameter | Symbol | Conditions | Ratings | Unit | ||
| min | typ | max | ||||
| Collector Cutoff Current | ICBO | VCB=800V, IE=0 | 10 | µA | ||
| Collector Cutoff Current | ICES | VCE=1500V, RBE=0 | 1.0 | mA | ||
| Collector Sustain Voltage | VCEO(sus) | IC=100mA, IB=0 | 800 | V | ||
| Emitter Cutoff Current | IEBO | VBE=4V, IC=0 | 40 | 130 | mA | |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC=2.7A, IB=0.54A | 3 | V | ||
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC=2.7A, IB=0.54A | 1.5 | V | ||
| DC Current Gain | hFE1 | VCE=5V, IC=0.5A | 10 | |||
| hFE2 | VCE=5V, IC=3A | 5 | 8 | |||
| Diode Forward Voltage | VF | IEC=4A | 2 | V | ||
| Fall Time | tf | IC=1.8A, IB1=0.36A, IB2=--0.72A | 0.3 | µs | ||
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