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NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts electronic ic chip N−Channel Enhancement Mode Dual SO−8 Package

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NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts electronic ic chip N−Channel Enhancement Mode Dual SO−8 Package

: Large Image : NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts electronic ic chip N−Channel Enhancement Mode Dual SO−8 Package

Product Details:

Place of Origin:	original factory
Brand Name:	ON Semiconductor
Certification:	new & original
Model Number:	NTMD6N02R2G

Payment & Shipping Terms:

Minimum Order Quantity:	1pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000pcs

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Detailed Product Description

Drain−to−Source Voltage:	20 V	Operating And Storage Temperature Range:	−55 To +150°C
Drain−to−Gate Voltage:	20 V	Maximum Lead Temperature:	260°C
Highlight:	thyristor diode module , low voltage power mosfet

Drain−to−Source Voltage:

20 V

Operating And Storage Temperature Range:

−55 To +150°C

Drain−to−Gate Voltage:

20 V

Maximum Lead Temperature:

260°C

Highlight:

thyristor diode module

low voltage power mosfet

NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts

Features
• Ultra Low RDS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• SOIC−8 Mounting Information Provided

• Pb−Free Package is Available
Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products, for example, Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	20	V
Drain−to−Gate Voltage (RGS = 1.0 M)	VDGR	20	V
Gate−to−Source Voltage − Continuous	VGS	12	V
Thermal Resistance, Junction−to−Ambient Total Power Dissipation Continuous Drain Current@ TA = 25°C Continuous Drain Current@ TA = 70°C Pulsed Drain Current	RJA PD ID ID IDM	62.5 2.0 6.5 5.5 50	°C/W W A A A

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued)

Rating	Symbol	Value	Unit
Operating and Storage Temperature Range	TJ, Tstg	−55 to +150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 )	EAS	360	mJ
Maximum Lead Temperature for Soldering Purposes for 10 seconds	TL	260	°C

NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts electronic ic chip N−Channel Enhancement Mode Dual SO−8 Package

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