256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor

K4S561632D-TC75 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
 
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
               -. CAS latency (2 & 3)
               -. Burst length (1, 2, 4, 8 & Full page)
               -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
GENERAL DESCRIPTION
The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

ABSOLUTE MAXIMUM RATINGS

DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -0 to 70°C)

 
 
 
 
 
 
 
 
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