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STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

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STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

: Large Image : STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	STN3NF06

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

Contact Now

Detailed Product Description

VDS:	60V	VGS:	± 20V
Ptot:	3.3W	Dv/dt:	10 V/ns
EAS:	200mJ	Tstg:	-55 To 150°C
Highlight:	electronics ic chip , integrated circuit ic

STN3NF06
N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STN3NF06	60 V	< 0.1 Ω	4 A

■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ AVALANCHE RUGGED TECHNOLOGY

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low onresistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufact
-uring reproducibility.

APPLICATIONS
■ DC-DC & DC-AC COVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
■ SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	60	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuous) at TC = 25°C	4	A
ID	Drain Current (continuous) at TC = 100°C	2.9	A
IDM(•)	Drain Current (pulsed)	16	A
	Total Dissipation at TC = 25°C	3.3	W
Ptot	Derating Factor	0.026	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
EAS (2)	Single Pulse Avalanche Energy	200	mJ
Tstg	Storage Temperature	-55 to 150	°C
Tj	Operating Junction Temperature	-55 to 150	°C

(•) Pulse width limited by safe operating area.

(1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V

STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET

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