Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage: | 600V | Drain-gate Voltage: | 600V |
|---|---|---|---|
| Main Line: | IC Components, Transistor, Diode, Module,Capacitor Etc | Delivery Time: | Stock Offer |
| Temperature: | -50~150 °C | Package: | TO-220 |
| Highlight: | npn smd transistor,multi emitter transistor |
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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
2SK3797 Field Effect Transistor Silicon N-Channel MOS Type 
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit |
| Drain-source voltage | VDSS | 600 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
|
Drain current DC Pulse (t = 1 ms) |
ID | 13 | A |
| IDP | 52 | ||
| Drain power dissipation (Tc = 25°C) | PD | 50 | W |
| Single pulse avalanche energy | EAS | 1033 | mJ |
| Avalanche current | AR | 13 | A |
| Repetitive avalanche energy | EAR | 5.0 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -50-150 | °C |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch-c) | 2.5 | w/ °C |
| Thermal resistance, channel to abinent | Rth (ch-a) | 62.5 | w/ °C |
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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