Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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Operating Case Temperature: | –20 To +100 °C | Feature: | Third Order Intercept: 46 DBm Typ |
---|---|---|---|
Feature2: | Power Gain: 30 DB Typ (@ F =1850 MHz) | Feature3: | Excellent Phase Linearity And Group Delay Characteristics |
Feature4: | Ideal For Feedforward Base Station Applications | Storage Temperature: | –40 To +100 °C |
Highlight: | low voltage power mosfet,hybrid inverter circuit |
Cellular Band RF Linear Amplifier Electronics Parts 47 dBm MHL9236
Designed for ultra–linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK
• Third Order Intercept: 47 dBm Typ
• Power Gain: 30.5 dB Typ (@ f = 880 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA, CDMA, QPSK or Analog Systems
Rating | Symbol | Value | Unit |
DC Supply Voltage | VDD | 30 | Vdc |
RF Input Power | Pin | +10 | dBm |
Storage Temperature Range | Tstg | –40 to +100 | °C |
Operating Case Temperature Range | TC | –20 to +100 | °C |
Characteristic | Symbol | Min | Typ | Max | Unit |
Supply Current | IDD | — | 550 | 620 | mA |
Power Gain (f = 880 MHz) | Gp | 29.5 | 30.5 | 31.5 | dB |
Gain Flatness (f = 800–960 MHz) | GF | — | 0.1 | 0.3 | dB |
Power Output @ 1 dB Comp. (f = 880 MHz) | Pout 1 dB | 33.0 | 34.0 | — | dBm |
Input VSWR (f = 800–960 MHz) | VSWRin | — | 1.2:1 | 1.5:1 | |
Output VSWR (f = 800–960 MHz) | VSWRout | — | 1.2:1 | 1.5:1 | |
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) | ITO | 46.0 | 47.0 | — | dBm |
Noise Figure (f = 800–960 MHz) | NF | — | 3.5 | 4.5 | dBm |
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