Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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VDS (V): | 600 | RDS(on) (Ω): | VGS = 10 V |
---|---|---|---|
Qg (Max.) (nC): | 60 | Qgs (nC): | 8.3 |
Qgd (nC): | 30 | Configuration: | Single |
Highlight: | multi emitter transistor,silicon power transistors |
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
ORDERING INFORMATION | |
Package | TO-220 |
Lead (Pb)-free |
IRFBC40PbF SiHFBC40-E3 |
SnPb |
IRFBC40 SiHFBC40 |
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