HALF - BRIDGE DRIVER ic electronic components , integrated components IR2109S

HALF-BRIDGE DRIVER 

IR2109(4) (S)

Features

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V, 5V and 15V input logic compatible

• Cross-conduction prevention logic

• Matched propagation delay for both channels

• High side output in phase with IN input

• Logic and power ground +/- 5V offset.

• Internal 540ns dead-time, and programmable up to 5us

with one external RDT resistor (IR21094)

• Lower di/dt gate driver for better noise immunity

• Shut down input turns off both channels.

Description

  The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver IR21094 IR2109 Packages IR2109(4) (S) Data Sheet No. PD60163-P VOFFSET 600V max. IO+/- 120 mA / 250 mA VOUT 10 - 20V ton/off (typ.) 750 & 200 ns Dead Time 540 ns (programmable up to 5uS for IR21094) Product Summary www.irf.com 1 VCC VB VS HO COM LO IN SD SD IN up to 600V TO LOAD VCC IN up to 600V TO LOAD VCC VB VS HO LO COM IN DT VSS SD VCC SD VSS RDT 8 Lead PDIP 14 Lead PDIP 8 Lead SOIC 14 Lead SOIC cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Lead Definitions