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HEXFET Power Mosfet Transistor , power mosfet module IRF7329

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HEXFET Power Mosfet Transistor , power mosfet module IRF7329

: Large Image : HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Product Details:

Place of Origin:	Thailand
Brand Name:	IRF
Certification:	Original Factory Pack
Model Number:	IRF7329

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

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Detailed Product Description

Drain- Source Voltage:	-12 V	Continuous Drain Current, VGS @ -4.5V:	-7.4 A
Pulsed Drain Current :	-37 A	Power Dissipation :	2.0 W
Linear Derating Factor:	16 MW/°C
Highlight:	multi emitter transistor , silicon power transistors

HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

Lead-Free

Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-12	V
I_D @ TA = 25°C	Continuous Drain Current, VGS @ -4.5V	-9.2	A
I_D@ TA= 70°C	Continuous Drain Current, VGS @ -4.5V -7.4	-7.4
I_DM	Pulsed Drain Current	-37
P_D @TA = 25°C	Power Dissipation	2.0	W
P_D@TA = 70°C	Power Dissipation	1.3	W
	Linear Derating Factor	16	mW/°C
V_GS	Gate-to-Source Voltage	± 8.0	V
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150	°C