Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Collector Cutoff Current: | <= (--)0.1 µA | Emitter Cutoff Current: | <= (--)0.1 µA |
|---|---|---|---|
| DC Current Gain: | 200-560 | Gain-Bandwidth Product: | (290)330 MHz |
| Highlight: | power mosfet ic,multi emitter transistor |
||
PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of FBET and MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Specifications ( ) : 2SA2040
| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | -- | (--50)100 | V |
| Collector-to-Emitter Voltage | VCES | -- | (--50)100 | V |
| Collector-to-Emitter Voltage | VCEO | -- | (--)50 | V |
| Emitter-to-Base Voltage | VEBO | -- | (--)6 | V |
| Collector Current | IC | -- | (--)8 | A |
| Collector Current (Pulse) | ICP | -- | (--)11 | A |
| Base Current | IB | -- | (--)2 | A |
| Collector Dissipation | PC |
-- Tc=25°C |
1.0 15 |
W W |
| Junction Temperature | Tj | -- | 150 | °C |
| Storage Temperature | Tstg | -- | --55 to +150 | °C |
| Parameter | Symbol | Conditions | min. | Typ. | max. | unit |
| Collector Cutoff Current | ICBO | VCB=(--)40V, IE=0A | -- | -- | (--)0.1 | µA |
| Emitter Cutoff Current | IEBO | VEB=(--)4V, IC=0A | -- | -- | (--)0.1 | µA |
| DC Current Gain | hFE | VCE=(--)2V, IC=(--)500mA | 200 | -- | 560 | -- |
| Gain-Bandwidth Product | fT | VCE=(--)10V, IC=(--)500mA | -- | (290)330 | -- | MHz |
| Output Capacitance | Cob | VCB=(--)10V, f=1MHz | -- | (50)28 | -- | pF |
| Collector-to-Emitter Saturation Voltage |
VCE(sat)1 VCE(sat)2 |
IC=(--)3.5A, IB=(--)175mA IC=(--)2A, IB=(--)40mA |
-- -- |
(--230)160 (--240)110 |
(--390)240 (--400)170 |
mV mV |
| Base-to-Emitterr Saturation Voltage | VBE(sat) | IC=(--)2A, IB=(--)40mA | -- | (--)0.83 | (--)1.2 | V |
| Collector-to-Base Breakdown Voltage | V(BR)CBO | IC=(--)10µA, IE=0A | (--50)100 | -- | -- | V |
| Collector-to-Emitter Breakdown Voltage | V(BR)CES | IC=(--)100µA, RBE=0Ω | (--50)100 | -- | -- | V |
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | IC=(--)1mA, RBE=∞ | (--)50 | -- | -- | V |
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | IE=(--)10µA, IC=0A | (--)6 | -- | -- | V |
| Turn-On Time | ton | See specified Test Circuit. | -- | (40)30 | -- | ns |
| Storage Time | tstg | See specified Test Circuit. | -- | (225)420 | -- | ns |
| Fall Time | tf | See specified Test Circuit. | -- | 25 | -- | ns |
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-003 7003-003
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