Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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Very Low Power Consumption: | 100 µW | Low Insertion Loss: | 0.5 DB |
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High Isolation: | 25 DB Up To 2 GHz | Temperature Range: | -40˚C To +85˚C |
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GaAs DPDT Switch DC - 2 GHz SW-289
Features
Description
M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost SOIC 14-lead surface mount plastic package. The SW-289 is ideally suited for use where very low power consumption is re q u i re d . Typical applications include transmit/receive switching, switch matrices, digital step attenuators, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment.
The SW-289 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.
Parameter | Test Conditions2 | Unit | Min. | Typ. | Max. |
Insertion Loss |
DC – 0.1 GHz DC – 0.5 GHz DC – 1.0 GHz DC – 2.0 GHz |
dB dB dB dB |
0.35 0.35 0.4 0.6 |
0.5 0.5 0.6 0.8 |
|
Isolation |
DC – 0.1 GHz DC – 0.1 GHz DC – 1.0 GHz DC – 2.0 GHz |
dB dB dB dB |
50 40 32 20 |
56 43 35 23 |
|
VSWR | DC – 2.0 GHz | 1.3:1 | |||
Trise, Tfall Ton, Toff Transients |
10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band |
nS nS mV |
3 6 15 |
||
One dB Compression |
Input Power 0.05 GHz Input Power 0.5 – 2.0 GHz |
dBm dBm |
22 27 |
||
IP2 |
Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) |
dBm dBm
|
54 66
|
||
IP3 |
Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) |
dBm dBm
|
45 48
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1. Refer to “Tape and Reel Packaging” section, or contact factory.
2. All measurements with 0, -5 V control voltages at 1 GHz in a 50W system, unless otherwise specified.
Parameter | Absolute Maximum |
Max. Input Power 0.05 GHz 0.5 – 2.0 GHz Control Voltage Operating Temperature Storage Temperature |
+27 dBm +34 dBm +5 V, -8.5 V -40°C to +85°C -65°C to +150°C |
1.Operation of this device above any one of these
parameters may cause permanent damage.
Functional Schematic
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