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Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

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Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

: Large Image : Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SK3568

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Drain-source Voltage:	500 V	Drain-gate Voltage (RGS = 20 KΩ):	500 V
Gate-source Voltage:	±30 V	Drain Power Dissipation (Tc = 25°C):	40 W
Single Pulse Avalanche Energy:	364 MJ	Avalanche Current:	12 A
Channel Temperature:	150 °C	Storage Temperature Range:	-55~150 °C
Highlight:	multi emitter transistor , silicon power transistors

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π-MOSVI) 2SK3568

Switching Regulator Applications

• Low drain-source ON resistance: R_DS (ON) = 0.4Ω (typ.)

• High forward transfer admittance: |Y_fs| = 8.5S (typ.)

• Low leakage current: I_DSS = 100 μA (V_DS = 500 V)

• Enhancement mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

Weight : 1.7 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics		Symbol	Rating	Unit
Drain−source voltage		V_DSS	900	V
Drain−gate voltage (R_GS = 20 kΩ)		V_DGR	900	V
Gate−source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	9	A
Drain current	Pulse (Note 1)	I_DP	27	A
Drain power dissipation (Tc = 25°C)		P_D	150	W
Single pulse avalanche energy (Note 2)		E_AS	663	mJ
Avalanche current		I_AR	9	A
Repetitive avalanche energy (Note 3)		E_AR	15	mJ
Channel temperature		T_ch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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