Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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Collector-base Voltage: | -100 V | Collector-emitter Voltage: | -100 V |
---|---|---|---|
Emitter-base Voltage: | - 8 V | Junction Temperature: | 150°C |
Storage Temperature: | -55 To +150°C | Collector Current: | -2 A(DC) |
Highlight: | power mosfet ic,multi emitter transistor |
Power Transistor (−100V , −2A) 2SB1580 / 2SB1316
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
External dimensions (Unit : mm)
Absolute maximum ratings (Ta = 25°C)
Parameter | Symbol | Limits | Unit | |
Collector-base voltage | VCBO | -100 | V | |
Collector-emitter voltage | VCEO | -100 | V | |
Emitter-base voltage | VEBO | -8 | V | |
Collector current | IC | -2 | A(DC) | |
-3 | A(Pulse) ∗1 | |||
Collector power dissipation | 2SB1580 | PC | 2 | W ∗2 |
2SB1316 | 1 | |||
10 | W(Tc=25°C) | |||
Junction temperature | Tj | 150 | °C | |
Storage temperature | Tstg | -55 to +150 | °C |
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and hFE
Type | 2SB1580 | 2SB1316 |
Package | MPT3 | CPT3 |
hFE | 1k to 10k | 1k to 10k |
Marking | BN∗ | -- |
Code | T100 | TL |
Basic ordering unit (pieces) | 1000 | 2500 |
∗ Denotes hFE
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