Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-Source Voltage: | -30 V | Gate-Source Voltage - Continuous: | ±20 V |
---|---|---|---|
Maximum Drain Current - Continuous (: | ±1.1 A | Maximum Power Dissipation: | 0.5 W |
Operating And Storage Temperature Range: | -55 To 150 °C | ||
Highlight: | power mosfet ic,multi emitter transistor |
General Description
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V
RDS(ON) = 0.2 W @ VGS=-10 V.
►Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior thermal
and electrical capabilities.
►High density cell design for extremely low RDS(ON).
►Exceptional on-resistance and maximum DC current capability.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol | Parameter | NDS356AP | Units |
VDSS | Drain-Source Voltage | -30 | V |
VGSS | Gate-Source Voltage - Continuous | ±20 | V |
ID | Maximum Drain Current - Continuous | ±1.1 | A |
PD | Maximum Power Dissipation | 0.5 | W |
TJ ,TSTG | Operating and Storage Temperature Range | -55 to 150 | °C |
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