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FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

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FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

: Large Image : FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	FGH60N60SFD

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	Negotiate

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Detailed Product Description

Collector To Emitter Voltage:	600 V	Gate To Emitter Voltage:	± 20 V
Collector Current @ TC = 25℃:	120 A	Pulsed Collector Current @ TC = 25℃:	180 A
Operating Junction Temperature:	-55 To +150 ℃	Storage Temperature Range:	-55 To +150 ℃
Highlight:	npn smd transistor , silicon power transistors

FGH60N60SFD

600V, 60A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

Absolute Maximum Ratings

Symbol	Description	Ratings	Units
V_CES	Collector to Emitter Voltage	600	V
V_GES	Gate to Emitter Voltage	± 20	V
I_C	Collector Current @ TC = 25℃	120	A
I_C	Collector Current @ TC = 100℃	60	A
I_{CM (1)}	Pulsed Collector Current @ TC = 25℃	180	A
P_D	Maximum Power Dissipation @ TC = 25℃	378	W
P_D	Maximum Power Dissipation @ TC = 100℃	151	W
T_J	Operating Junction Temperature	-55 to +150	℃
T_stg	Storage Temperature Range	-55 to +150	℃
T_L	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	℃