Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Pulsed Drain Current: | 85 A | Avalanche Current, Repetitive T AR: | 20 A |
---|---|---|---|
Drain Source Voltage Slope: | 80 V/ns | Reverse Diode Dv /dt: | 40 V/ns |
Power Dissipation: | 313 W | Operating And Storage Temperature: | -55 To 150 °C |
Highlight: | multi emitter transistor,silicon power transistors |
CoolMOSTM Power Transistor
Features PG-TO247
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
VDS | 600 | V |
RDS(on),max | 0.118 | Ω |
ID | 34 | A |
Maximum ratings, at T j =25 °C, unless otherwise specified
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | I D | T C=25 °C | 34.1 | A |
T C=100 °C | 21.6 | A | ||
Pulsed drain current2) | I D,pulse | T C=25 °C | 85 | A |
Avalanche energy, single pulse | E AS | I D=10 A, V DD=50 V | 1300 | mJ |
Avalanche energy, repetitive t AR 2),3) | E AR | I D=20 A, V DD=50 V | 1 | mJ |
Avalanche current, repetitive t AR 2),3) | I AR | 20 | A | |
Drain source voltage slope | dv /dt | I D=34.1 A, V DS=480 V, T j =125 °C | 80 | V/ns |
Reverse diode dv /dt | dv /dt |
I S=34.1 A, V DS=480 V, T j =125 °C
| 40 | V/ns |
Maximum diode commutation speed | di /dt | 600 | A/µs | |
Gate source voltage | V GS | static | ±20 | V |
AC (f >1 Hz) | ±30 | V | ||
Power dissipation | P tot | T C=25 °C | 313 | W |
Operating and storage temperature | T j , T stg | -55 ... 150 | °C |
PG-TO247-3-21-41
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