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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

Large Image : FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

Product Details:

Place of Origin:	Malaysia
Brand Name:	FSC
Certification:	Original Factory Pack
Model Number:	FDS8858CZ

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiation
Packaging Details:	REEL
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5000PCS

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Detailed Product Description

Temperature Range:	–55°C To +150 °C	Typical Thermal Resistance:	-7.3A
Voltage:	-30V	Forward Surge Current:	40-78 °C/w
Package:	SOP-8	Factory Package:	REEL
Highlight:	electronic integrated circuit , digital integrated circuits

FDS8858CZ

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ

P-Channel: -30V, -7.3A, 20.5mΩ

Features

Q1: N-Channel Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A

Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel

Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A

Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A

High power and handing capability in a widely used surface mount package

Fast switching speedt

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Application

Inverter Synchronous Buck

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted

Symbol	Parameter	Q1	Q2	Unit
VDS	Drain to Source Voltage	30	-30	V
VGS	Gate to Source Voltage	±20	±25	V
Id	Drain Current - Continuous TA = 25°C	8.6	-7.3	A
Id	-Pulsed	20	-20
Pd	Power Dissipation for Dual Operation	2.0		w
	Power Dissipation for Single Operation TA = 25°C	1.6
	TA = 25°C	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150		°C

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