Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Collector–Emitter Voltage: | 1200 Vdc | Collector–Gate Voltage (RGE = 1.0 MΩ): | 1200 Vdc |
|---|---|---|---|
| Gate–Emitter Voltage — Continuous: | ± 20 Vdc | Total Power Dissipation @ TC = 25°C: | 125 Watts |
| Operating And Storage Junction Temperature Range: | –55 To 150 °C | Short Circuit Withstand Time: | 10 μs |
| Highlight: | npn smd transistor,silicon power transistors |
||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–247 
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Rating | Symbol | Value | Unit |
| Collector–Emitter Voltage | VCES | 1200 | Vdc |
| Collector–Gate Voltage (RGE = 1.0 MΩ) | VCGR | 1200 | Vdc |
| Gate–Emitter Voltage — Continuous | VGE | ± 20 | Vdc |
Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) | IC25 IC90 ICM | 20 12 40 | Vdc
Apk |
Total Power Dissipation @ TC = 25°C Derate above 25°C | PD | 125 0.98 | Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to 150 | °C |
Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) | tsc | 10 | μs |
Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient | RθJC RθJC RθJA | 1.0 1.4 45 | °C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 6–32 or M3 screw | 10 lbf*in (1.13 N*m) | ||
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
PACKAGE DIMENSIONS
Stock Offer (Hot Sell)
| Part NO. | Q'ty | MFG | D/C | Package |
| L9616D | 3785 | ST | 15+ | SOP8 |
| LM7818CT | 7181 | NSC | 14+ | TO-220 |
| 2MBI100N-060 | 418 | FUJI | 12+ | MODULE |
| PMBS3904 | 60000 | NXP | 14+ | SOT-23 |
| MT41K128M16JT-125:K | 7044 | MICRON | 14+ | BGA |
| P80C31BH-1 | 9620 | INTEL | 16+ | DIP |
| LXT906PC | 4933 | LEVELONE | 16+ | PLCC |
| LTC3440EMS | 6740 | LT | 16+ | MSOP |
| MAX3232EIPWR | 11650 | TI | 14+ | TSSOP |
| BTA24-600BW | 10000 | ST | 15+ | TO-220 |
| MSP430G2231IPW14R | 6841 | TI | 16+ | TSSOP |
| MJF15031G | 86000 | ON | 16+ | TO-220 |
| MC7805ABD2TR4G | 4072 | ON | 14+ | TO-263 |
| MCP73871-2CCI/ML | 5626 | MICROCHIP | 16+ | QFN |
| MCP1702-5002E/TO | 5050 | MICROCHIP | 16+ | TO-92 |
| NCT3941S-A | 14560 | NUVOTON | 11+ | SOP-8 |
| LM308H | 500 | NSC | 11+ | CAN-8 |
| M27256-2F1 | 4179 | ST | 16+ | DIP |
| LM75AD | 5432 | NXP | 14+ | SOP-8 |
| MAX6369KA+T | 4625 | MAXIM | 14+ | SOT |
| PIC16F76T-I/SO | 4988 | MICROCHIP | 14+ | SOP |
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