Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-Source Voltage: | 200 V | Gate-Source Voltage: | ±30 V |
---|---|---|---|
Drain Current (Continuous): | 10 A | Avalanche Current: | 10 A |
Avalanche Energy: | 120 MJ | Storage Temperature: | −55 To +150 °C |
Highlight: | multi emitter transistor,silicon power transistors |
Switching (200V, 10A)
RDN100N20
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
Absolute maximum ratings (Ta=25°C)
Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | 200 | V | |
Gate-Source Voltage | VGSS | ±30 | V | |
Drain Current | Continuous | ID | 10 | A |
Pulsed | IDP *1 | 40 | A | |
Reverse Drain Current | Continuous | IDR | 10 | A |
Pulsed | IDRP *1 | 40 | A | |
Avalanche Current | IAS *2 | 10 | A | |
Avalanche Energy | EAS *2 | 120 | mJ | |
Total Power Dissipation (TC=25°C) | PD | 35 | W | |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | −55 to +150 | °C |
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
External dimensions (Unit : mm)
Equivalent circuit
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
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