Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-source Voltage: | 650 V | Gate-source Voltage: | ±30 V |
---|---|---|---|
Drain Current (Pulsed): | 28 A | Drain Power Dissipation: | 52 W |
Single Pulsed Avalanche Energy: | 340 MJ | Storage Temperature Range: | -55~150 °C |
Highlight: | npn smd transistor,multi emitter transistor |
STK0765BF Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=650V(Min.)
• Low Crss : Crss=13pF(Typ.)
• Low gate charge : Qg=32nC(Typ.)
• Low RDS(on) :RDS(on)=1.2Ω(Typ.)
Ordering Information
Type NO. Marking Package Code
STK0765BF STK0765 TO-220F-3L
Absolute maximum ratings (Tc=25°C)
Characteristic | Symbol | Rating | Unit | |
Drain-source voltage | VDSS | 650 | V | |
Gate-source voltage | VGSS | ±30 | V | |
Drain current (DC) | (Tc=25℃) | ID | 7 | A |
(Tc=100℃) | 4.4 | A | ||
Drain current (Pulsed) * | IDP | 28 | A | |
Drain power dissipation | PD | 52 | W | |
Single pulsed avalanche energy ② | EAS | 340 | mJ | |
Avalanche current (Repetitive) ① | IAR | 5.2 | A | |
Repetitive avalanche energy ① | EAR | 13 | mJ | |
Junction temperature | TJ | 150 | °C | |
Storage temperature range | Tstg | -55~150 | °C |
* Limited by maximum junction temperature
Note :
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=10mH, IAS=7A, VDD=50V, RG=25Ω , starting TJ=25℃
Outline Dimensions unit : mm
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