Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage (VGS = 0): | 600 V | Drain-gate Voltage (RGS = 20 KΩ): | 600 V |
|---|---|---|---|
| Gate- Source Voltage: | ±30 V | Peak Diode Recovery Voltage Slope: | 15 V/ns |
| Storage Temperature: | -65 To 150 °C | Max. Operating Junction Temperature: | 150 °C |
| Highlight: | npn smd transistor,multi emitter transistor |
||
STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET
General Features
| TYPE | VDSS | RDS(on) | ID |
|
STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 |
600 V 600 V 600 V 600 V 600 V |
< 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω |
20 A 20 A 20 A 20 A 20 A |
■ TYPICAL RDS(on) = 0.25 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
|
TO-220/D²PAK/ I²PAK/TO-247 |
TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 20 | 20 (*) | A |
| ID | Drain Current (continuous) at TC = 100°C | 12.6 | 12.6 (*) | A |
| IDM (•) | Drain Current (pulsed) | 80 | 80 (*) | A |
| PTOT | Total Dissipation at TC = 25°C | 192 | 45 | W |
| Derating Factor | 1.2 | 0.36 | W/°C | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 15 | V/ns | |
| VISO | Insulation Winthstand Voltage (DC) | - | 2500 | V |
| Tstg | Storage Temperature | -65 to 150 | °C | |
| Tj | Max. Operating Junction Temperature | 150 | °C | |
(•) Pulse width limited by safe operating area
(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
Package
Internal Schematic Diagram
Stock Offer (Hot Sell)
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