TC4429CPA npn general purpose transistor Power Mosfet Transistor 6A High-Speed MOSFET Drivers

TC4420/TC4429

6A High-Speed MOSFET Drivers

Features

• Latch-Up Protected: Will Withstand >1.5A Reverse Output Current

• Logic Input Will Withstand Negative Swing Up To 5V

• ESD Protected: 4 kV

• Matched Rise and Fall Times: - 25 ns (2500 pF load)

• High Peak Output Current: 6A

• Wide Input Supply Voltage Operating Range: - 4.5V to 18V

• High Capacitive Load Drive Capability: 10,000 pF

• Short Delay Time: 55 ns (typ.)

• CMOS/TTL Compatible Input

• Low Supply Current With Logic ‘1’ Input: - 450 µA (typ.)

• Low Output Impedance: 2.5Ω

• Output Voltage Swing to Within 25 mV of Ground or VDD

• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN Packages

Applications

• Switch-Mode Power Supplies

• Motor Controls

• Pulse Transformer Driver

• Class D Switching Amplifiers

General Description

The TC4420/TC4429 are 6A (peak), single-output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers.

Both devices have TTL/CMOS compatible inputs that can be driven as high as VDD + 0.3V or as low as –5V without upset or damage to the device. This eliminates the need for external level-shifting circuitry and its associated cost and size. The output swing is rail-to-rail, ensuring better drive voltage margin, especially during power-up/power-down sequencing. Propagational delay time is only 55 ns (typ.) and the output rise and fall times are only 25 ns (typ.) into 2500 pF across the usable power supply range.

Unlike other drivers, the TC4420/TC4429 are virtually latch-up proof. They replace three or more discrete components, saving PCB area, parts and improving overall system reliability.

Absolute Maximum Ratings†

Supply Voltage .....................................................+20V

Input Voltage ..................................– 5V to V_DD + 0.3V

Input Current (V_IN > V_DD)...................................50 mA

Power Dissipation (T_A ≤ 70°C)

    5-Pin TO-220....................................................1.6W

    CERDIP.......................................................800 mW

    DFN ............................................ ...................Note 2

    PDIP ............................................................730 mW

    SOIC............................................................470 mW

Package Power Dissipation (T_A ≤ 25°C)

    5-Pin TO-220 (With Heatsink) ........................12.5W

Thermal Impedances (To Case)

    5-Pin TO-220 R_θJ-C ......................................10°C/W

Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature (Chip) .............................. +150°C

Operating Temperature Range (Ambient)

    C Version ............................................... 0°C to +70°C

    I Version ........................................... – 25°C to +85°C

    E Version .......................................... – 40°C to +85°C

    M Version ....................................... – 55°C to +125°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

† Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Package Types(1)

Functional Block Diagram

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