Anterwell Technology Ltd.
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Supply Voltage 1: | 40 V | Supply Voltage 2: | 70 V |
---|---|---|---|
Flyback Supply Voltage Of TDA4865J: | 70 V | Storage Temperature: | −25 To +150 °C |
Ambient Temperature: | −20 To +75 °C | Junction Temperature: | 150 °C |
Highlight: | multi emitter transistor,silicon power transistors |
TDA4865J; TDA4865AJ
Vertical deflection booster
General description
The TDA4865J and TDA4865AJ are deflection boosters for use in vertical deflection systems for frame frequencies up to 200 Hz.
The TDA4865J needs a separate flyback supply voltage, so the supply voltages are independently adjustable to optimize power consumption and flyback time.
For the TDA4865AJ the flyback supply voltage will be generated internally by doubling the supply voltage and therefore a separate flyback supply voltage is not needed.
Both circuits provide differential input stages.
Features
■ Power amplifier with differential inputs
■ Output current up to 3.8 A (p-p)
■ High vertical deflection frequency up to 200 Hz
■ High linear sawtooth signal amplification
■ Flyback generator:
◆ TDA4865J: separate adjustable flyback supply voltage up to 70 V
◆ TDA4865AJ: internally doubled supply voltage (two supply voltages only for DC-coupled outputs)
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages referenced to pin GND; unless otherwise specified.
Symbol | Parameter | Conditions | Min | Max | Unit |
VP1 | supply voltage 1 | - | 40 | V | |
VP2 | supply voltage 2 | - | 70 | V | |
VFB | flyback supply voltage of TDA4865J | - | 70 | V | |
VP3 | flyback generator output voltage of TDA4865AJ | 0 | VP1 +3 | V | |
Vi(INN) | input voltage on pin INN | - | VP1 | V | |
Vi(INP) | input voltage on pin INP | - | VP1 | V | |
Vo(VOUT) | output voltage on pin VOUT | - | 72 | V | |
IP2 | supply current 2 | - | ±2.0 | A | |
Io(VOUT) | output current on pin VOUT | [1] - | ±2.0 | A | |
IVFB | current during flyback of TDA4865J | - | ±2.0 | A | |
IVP3 | current during flyback of TDA4865AJ | - | ±2.0 | A | |
Tstg | storage temperature | -25 | +150 | °C | |
Tamb | ambient temperature | -20 | +75 | °C | |
Tj | junction temperature | [1] - | 150 | °C | |
Vesd | electrostatic discharge voltage |
machine model human body model |
[2] −400 [3] −4000 |
+400 +4000 |
V V |
[1] Internally limited by thermal protection; will be activated for Tj ≥ 150 °C.
[2] Class C according to EIA/JESD22-A115-A.
[3] Class 3A according to JESD22-A114C.01.
Block diagram
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