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TTA19430 Transistor Silicon PNP Epitaxial Type Power Mosfet Transistor

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TTA19430 Transistor Silicon PNP Epitaxial Type Power Mosfet Transistor

: Large Image : TTA19430 Transistor Silicon PNP Epitaxial Type Power Mosfet Transistor

Product Details:

Place of Origin:	Original
Brand Name:	TOSHIBA
Certification:	Original Factory Pack
Model Number:	TTA19430

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VCBO:	-230 V	VCEO:	-230 V
VEBO:	-5 V	IC:	-15 A
IB:	-1.5 A
Highlight:	power mosfet ic , multi emitter transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type

TTA19430 Transistor Silicon PNP Epitaxial Type Power Mosfet Transistor • High collector voltage: VCEO = -230 V (min)

• Complementary to TTC5200

• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Power Amplifier Applications

Note1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Absolute Maximum Ratings (Ta = 25°C)

Characteristics	Symbol	Rating	Unit
Collector-base voltage	V_CBO	-230	V
Collector-emitter voltage	V_CEO	-230
Emitter-base voltage	V_EBO	-5
Collector current	I_C	-15	A
Base current	I_B	-1.5	A
Collector power dissipation (Tc=25°C)	P_C	150	W
Junction temperature	Tj	150	°C
Storage temperature range	Tstg	−55 to 150	°C

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