E28F128J3A-150 microchips and integrated circuits Integrated Circuit Chip 3 Volt Intel StrataFlash Memory

3 Volt Intel® StrataFlash™ Memory

28F128J3A, 28F640J3A, 28F320J3A (x8/x16)

Product Features

■ High-Density Symmetrically-Blocked Architecture

    —128 128-Kbyte Erase Blocks (128 M)

    —64 128-Kbyte Erase Blocks (64 M)

    —32 128-Kbyte Erase Blocks (32 M)

■ High Performance Interface Asynchronous Page Mode Reads

    —110/25 ns Read Access Time (32 M)

    —120/25 ns Read Access Time (64 M)

    —150/25 ns Read Access Time (128 M)

■ 2.7 V–3.6 V VCC Operation

■ 128-bit Protection Register

    —64-bit Unique Device Identifier

    —64-bit User Programmable OTP Cells

■ Enhanced Data Protection Features Absolute Protection with VPEN = GND

    —Flexible Block Locking

    —Block Erase/Program Lockout during Power Transitions

■ Packaging

    —56-Lead TSOP Package

    —64-Ball Intel® Easy BGA Package

■ Cross-Compatible Command Support Intel Basic Command Set

    —Common Flash Interface

    —Scalable Command Set

■ 32-Byte Write Buffer

    —6 µs per Byte Effective Programming Time

■ 12.8M Total Min. Erase Cycles (128 Mbit)

   6.4M Total Min. Erase Cycles (64 Mbit)

   3.2M Total Min. Erase Cycles (32 Mbit)

    —100K Minimum Erase Cycles per Block

■ Automation Suspend Options

    —Block Erase Suspend to Read

    —Block Erase Suspend to Program

    —Program Suspend to Read

■ 0.25 µ Intel® StrataFlash™ Memory Technology

Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel® StrataFlash™ memory products provide 2X the bits in 1X the space, with new features for mainstream performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring reliable, two-bit-per-cell storage technology to the flash market segment.

Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices, support for code and data storage, and easy migration to future devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash memory devices take advantage of over one billion units of manufacturing experience since 1987. As a result, Intel StrataFlash components are ideal for code and data applications where high density and low cost are required. Examples include networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash memory (28F640J5 and 28F320J5) devices.

Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.

Manufactured on Intel® 0.25 micron ETOX™ VI process technology, Intel StrataFlash memory provides the highest levels of quality and reliability.

Absolute Maximum Ratings

NOTES:

1. All specified voltages are with respect to GND. Minimum DC voltage is –0.5 V on input/output pins and –0.2 V on VCC and VPEN pins. During transitions, this level may undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins, VCC, and VPEN is VCC +0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns.

2. Output shorted for no more than one second. No more than one output shorted at a time.

3 Volt Intel® StrataFlash™ Memory Block Diagram

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