Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain To Source Voltage: | -100 V | Drain To Gate Voltage (RGS = 20kΩ): | -100 V |
|---|---|---|---|
| Continuous Drain Current: | -19 A | Pulsed Drain Current: | -76 A |
| Maximum Power Dissipation: | 150 W | Operating And Storage Temperature: | -55 To 175 ℃ |
| Highlight: | npn smd transistor,multi emitter transistor |
||
IRF9540, RF1S9540SM
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly Developmental Type TA17521.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified
| PARAMETER | SYMBOL | IRF9540, RF1S9540SM | UNITS |
| Drain to Source Voltage (Note 1) | VDS | -100 | V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) | VDGR | -100 | V |
|
Continuous Drain Current TC = 100℃ |
ID |
-19 -12 |
A A |
| Pulsed Drain Current (Note 3) | IDM | -76 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation (Figure 1) | PD | 150 | W |
| Linear Derating Factor (Figure 1) | 1 | W/℃ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 960 | mJ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | ℃ |
|
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
℃ ℃ |
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25℃ to 150℃.
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Test Circuits and Waveforms
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