Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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IF(AV): | 35 A | VR: | 200 V |
---|---|---|---|
IFSM: | 300 A | PD: | 67 W |
TJ, TStg: | - 55 To 175 °C | ||
Highlight: | multi emitter transistor,silicon power transistors |
FEATURES
• Two common-cathode diodes
• Ultrafast reverse recovery
• Ultrafast reverse recovery current shape
• Low forward voltage drop
• Low leakage current
• Optimized for power conversion:
welding and industrial SMPS applications
• Up to 175 °C operating junction temperature
• Designed and qualified for industrial level
DESCRIPTION
The 70CRU02 integrates two state of the art Vishay HPP ultrafast recovery rectifiers in the common-cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER | SYMBOL | TEST CONDITIONS | MAX. | UNITS |
Continuous forward current per diode | IF(AV) | TC = 145 °C | 35 | A |
Cathode to anode voltage | VR | 200 | V | |
Single pulse forward current per diode | IFSM | TC = 25 °C | 300 | A |
Maximum power dissipation per module | PD | TC = 100 °C | 67 | W |
Operating junction and storage temperatures | TJ, TStg | - 55 to 175 | °C |
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