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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

: Large Image : AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

Product Details:

Place of Origin:	brand new
Brand Name:	AOSMD
Certification:	Original Factory Pack
Model Number:	AO4449

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

Contact Now

Detailed Product Description

VDS (V:	-30V	ID:	-7 A (VGS = -10V)
RDS(ON):	< 54mΩ (VGS = -4.5V)	TLEAD:	260 0 C
Highlight:	power mosfet ic , multi emitter transistor

VDS (V:

-30V

ID:

-7 A (VGS = -10V)

RDS(ON):

< 54mΩ (VGS = -4.5V)

TLEAD:

260 0 C

Highlight:

power mosfet ic

multi emitter transistor

P-Channel Enhancement Mode Field Effect Transistor

AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

Features

VDS (V) = -30V

ID = -7 A (VGS = -10V)

RDS(ON) < 34mΩ (VGS = -10V)

RDS(ON) < 54mΩ (VGS = -4.5V)

General Description

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications).

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

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