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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

: Large Image : MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	MMBF170

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8600pcs

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Detailed Product Description

Drain-Source Voltage:	60 V	Drain-Gate Voltage (RGS < 1MW):	60 V
Gate-Source Voltage:	± 20 V	Drain Current - Continuous:	500 MA
Operating And Storage Temperature Range:	-55 To 150 °C
Highlight:	power mosfet ic , silicon power transistors

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

High density cell design for low R_DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

Symbol	Parameter	BS170	MMBF170	Unit
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS < 1MW)	60		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous - Pulsed	500	500	mA
I_D	Drain Current - Continuous - Pulsed	1200	800	mA
P_D	Maximum Power Dissipation Derate Above 25°C	830	300	mW
P_D	Maximum Power Dissipation Derate Above 25°C	6.6	2.4	mW/°C
T_J ,T_STG	Operating and Storage Temperature Range	-55 to 150		°C
T_L	Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds	300		°C
THERMAL CHARACTERISTICS
R_θJA	Thermal Resistacne, Junction-to-Ambient	150	417	°C/W