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BFQ67-GS08 Silicon NPN Planar RF Transistor switching power mosfet low power mosfet

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BFQ67-GS08 Silicon NPN Planar RF Transistor switching power mosfet low power mosfet

: Large Image : BFQ67-GS08 Silicon NPN Planar RF Transistor switching power mosfet low power mosfet

Product Details:

Place of Origin:	Original
Brand Name:	VISHAY
Certification:	Original Factory Pack
Model Number:	BFQ67-GS08

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VCBO:	20 V	VCEO:	10 V
VEBO:	2.5 V	IC:	50 MA
Ptot:	200 MW
Highlight:	multi emitter transistor , silicon power transistors

Silicon NPN Planar RF Transistor

Applications

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

Features

Small feedback capacitance

Low noise figure

High transition frequency

Absolute Maximum Ratings

Tamb = 25C, unless otherwise specified

Parameter	Test Conditions	Symbol	Value	Unit
Collector-base voltage		VCBO	20	V
Collector-emitter voltage		VCEO	10	V
Emitter-base voltage		VEBO	2.5	V
Collector current		IC	50	mA
Total power dissipation	Tamb ≤ 60 C	Ptot	200	mW
Junction temperature		Tj	150	C
Storage temperature range		Tstg	–65 to +150	C

Typical Characteristics

(Tamb = 25C unless otherwise specified)

BFQ67-GS08 Silicon NPN Planar RF Transistor switching power mosfet low power mosfet

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