Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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I² T Value For Fusing: | 5.1 A² S | Critical Rate Of Rise Of On-state Current IG = 2 X IGT , Tr ≤ 100 Ns: | 50 A/µs |
---|---|---|---|
Peak Gate Current: | 4 A | Average Gate Power Dissipation: | 1 W |
Storage Junction Temperature Range: | - 40 To + 150 °C | Operating Junction Temperature Range: | - 40 To + 125 °C |
High Light: | power mosfet ic,multi emitter transistor |
T4 Series
4A TRIACS
Main Features
Symbol | Value | Unit |
IT(RMS) | 4 | A |
VDRM/VRRM | 600 to 800 | V |
IGT (Q1) | 5 to 35 | mA |
DESCRIPTION
Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads.
They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...- ...W version complies with UL standards (ref. E81734).
Absolute Maximum Ratings
Symbol | Parameter | Value | Unit | ||
IT(RMS) | RMS on-state current (full sine wave) | IPAK/DPAK/ TO-220AB | Tc = 110°C | 4 | A |
ISOWATT220AB | Tc = 105°C | ||||
ITSM | Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) | F = 50 Hz | t = 20 ms | 30 | A |
F = 60 Hz | t = 16.7 ms | 31 | |||
I ² t | I² t Value for fusing | tp = 10 ms | 5.1 | A² s | |
dI/dt | Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns | F = 120 Hz | Tj = 125°C | 50 | A/µs |
IGM | Peak gate current | tp = 20 µs | Tj = 125°C | 4 | A |
PG(AV) | Average gate power dissipation | Tj = 125°C | 1 | W | |
Tstg Tj |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C |
DPAK Package Mechanical Data
DPAK Foot Print Dimensions (in millimeters)
ISOWATT220AB Package Mechanical Data
IPAK Package Mechanical Data
TO-220AB Package Mechanical Data
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