Anterwell Technology Ltd.
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Collector-base Voltage: | −40 V | Collector-emitter Voltage: | −40 V |
---|---|---|---|
Emitter-base Voltage: | −6 V | Total Power Dissipation: | 500 MW |
Storage Temperature: | −65 To +150 °C | Operating Ambient Temperature: | −65 To +150 °C |
Highlight: | power mosfet ic,multi emitter transistor |
PNP switching transistor 2N3906
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904.
PINNING
PIN | DESCRIPTION |
1 | collector |
2 | base |
3 | emitter |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | − | −40 | V |
VCEO | collector-emitter voltage | open base | − | −40 | V |
VEBO | emitter-base voltage | open collector | − | −6 | V |
IC | collector current (DC) | − | −200 | mA | |
ICM | peak collector current | − | −300 | mA | |
IBM | peak base current | − | −100 | mA | |
Ptot | total power dissipation | Tamb ≤ 25 °C | − | 500 | mW |
Tstg | storage temperature | −65 | +150 | °C | |
Tj | junction temperature | − | 150 | °C | |
Tamb | operating ambient temperature | −65 | +150 | °C |
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
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