Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Collector-base Voltage: | 200 V | Collector-emitter Voltage: | 150 V |
---|---|---|---|
Emitter-base Voltage: | 5 V | Collector Current: | 50 MA |
Collector Power Dissipation: | 800 MW | Storage Temperature Range: | −55 To 150 °C |
Highlight: | power mosfet ic,multi emitter transistor |
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2229
Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications
• High breakdown voltage: VCEO = 150 V (min)
• Low output capacitance: Cob = 5.0 pF (max)
• High transition frequency: fT = 120 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics | Symbol | Rating | Unit |
Collector-base voltage | VCBO | 200 | V |
Collector-emitter voltage | VCEO | 150 | V |
Emitter-base voltage | VEBO | 5 | V |
Collector current | IC | 50 | mA |
Base current | IB | 20 | mA |
Collector power dissipation | PC | 800 | mW |
Junction temperature | Tj | 150 | °C |
Storage temperature range | Tstg | −55 to 150 | °C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.36 g (typ.)
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