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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

: Large Image : STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	STGB7NC60HDT4

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7800pcs

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Detailed Product Description

Collector-Emitter Voltage:	600 V	Emitter-Collector Voltage:	20 V
Gate-Emitter Voltage:	±20 V	Collector Current (pulsed):	50 A
Diode RMS Forward Current At TC = 25°C:	20 A	Storage Temperature:	– 55 To 150 °C
Operating Junction Temperature:	– 55 To 150 °C	Total Dissipation At TC = 25°C:	80 W
Highlight:	power mosfet ic , multi emitter transistor

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

DS1245Y-100	1002	DALLAS	15+	TO-92
DS1990A-F5	1002	MAXIM	16+	CAN
ICL7135CPIZ	1002	INTERSIL	16+	DIP
IRFP150NPBF	5000	IR	14+	TO-247
IRFP260NPBF	5000	IR	14+	TO-247
K847P	1002	VISHAY	14+	DIP16
LM301AN	1002	NS	16+	DIP8
LM35DT	1002	NS	16+	TO-220
MC34074AP	1002	ON	13+	DIP14
TC962CPA	1002	MICROCHIP	15+	DIP8
VB125ASP	1002	STM	16+	SOP-10
LT1084CT-12	1005	LT	16+	TO220
XC2C64A-7VQG44C	1005	XILINX	14+	QFP44
30344	560	BOSCH	14+	QFP
AT93C66A-10SQ-2.7	1008	ATMEL	14+	SOP8
NCP1200AP40	1008	ON	16+	DIP8
PCA82C250T/N4,118	3000	NXP	16+	SOP8
ADM5120PX-AB-T-2	1009		13+	QFP208
TDA8950J	1011	NXP	15+	ZIP23
HT8950	1012	HOLTEK	16+	DIP
TDA7384	1012	ST	16+	ZIP
CS5550-ISZ	1022	CIRRUS	14+	SSOP24
LF412CN	1022	NS	14+	DIP8
IR21141SSPBF	1031	IR	14+	SSOP24
XCF04SVOG20C	1034	XILINX	16+	SOP
MC34084P	1050	ON	16+	DIP-14
DAC1220E	1077	TI	13+	SSOP16
AT91SAM7X256-AU	1088	ATMEL	15+	QFP
74LVX4245MTCX	1100	FSC	16+	TSSOP
ADM2582EBRWZ	1100	AD	16+	SOP-20

STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

■ LOWER ON-VOLTAGE DROP (V_cesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER C_RES/C_IES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		STGP7NC60HD STGB7NC60HD	STGF7NC60HD
V_CES	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ECR	Emitter-Collector Voltage	20		V
V_GE	Gate-Emitter Voltage	±20		V
I_C	Collector Current (continuous) at T_C = 25°C (#)	25	10	A
I_C	Collector Current (continuous) at T_C = 100°C (#)	14	6	A
I_CM (1)	Collector Current (pulsed)	50		A
I_F	Diode RMS Forward Current at T_C = 25°C	20		A
P_TOT	Total Dissipation at T_C = 25°C	80	25	W
	Derating Factor	0.64	0.20	W/°C
V_ISO	Insulation Withstand Voltage A.C. (t = 1 sec; T_c = 25°C)	-	2500	V
Tstg	Storage Temperature	– 55 to 150		°C
Tj	Operating Junction Temperature	– 55 to 150		°C